The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2007
Filed:
May. 19, 2005
Rolf Brenner, Randwick, AU;
Tilo Marcus Buehler, Randwick, AU;
Robert Graham Clark, Balgowah Heights, AU;
Andrew Steven Dzurak, Potts Point, AU;
Alexander Rudolf Hamilton, Coogee, AU;
Nancy Ellen Lumpkin, Waterfall, AU;
Rita Paytricia Mckinnon, Dulwich Hill, AU;
Rolf Brenner, Randwick, AU;
Tilo Marcus Buehler, Randwick, AU;
Robert Graham Clark, Balgowah Heights, AU;
Andrew Steven Dzurak, Potts Point, AU;
Alexander Rudolf Hamilton, Coogee, AU;
Nancy Ellen Lumpkin, Waterfall, AU;
Rita Paytricia McKinnon, Dulwich Hill, AU;
Unisearch Limited, Sydney, AU;
Abstract
A silicon substrate is coated with one or more layers of resist. First and second circuit patterns are exposed in sequence, where the second pattern crosses the first pattern. The patterned resist layers are developed to open holes which extend down to the substrate only where the patterns cross over each other. These holes provide a mask suitable for implanting single phosphorous ions in the substrate, for a solid state quantum computer. Further development of the resist layers provides a mask for the deposition of nanoelectronic circuits, such as single electron transistors, aligned to the phosphorous ions.