The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2007
Filed:
Jul. 20, 2004
Jeffrey E. Nause, Mableton, GA (US);
Joseph Owen Maciejewski, Mableton, GA (US);
Vincente Munne, Norcross, GA (US);
Shanthi Ganesan, Smyrna, GA (US);
Jeffrey E. Nause, Mableton, GA (US);
Joseph Owen Maciejewski, Mableton, GA (US);
Vincente Munne, Norcross, GA (US);
Shanthi Ganesan, Smyrna, GA (US);
Cermet, Inc., Atlanta, GA (US);
Abstract
A method of depositing a p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer over a substrate by a metalorganic chemical vapor deposition technique. A reaction gas is supplied to a surface of a heated substrate in a direction parallel or oblique to the substrate. The p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer is grown on the heated substrate, while introducing a pressing gas substantially in a vertical direction toward the substrate to press the reaction gas against the entire surface of the substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile