The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2007
Filed:
Feb. 21, 2003
Masaki Mizutani, Shiga, JP;
Shunichi Ishihara, Shiga, JP;
Katsumi Nakagawa, Kanagawa, JP;
Hiroshi Sato, Shiga, JP;
Takehito Yoshino, Shiga, JP;
Shoji Nishida, Kanagawa, JP;
Noritaka Ukiyo, Shiga, JP;
Masaaki Iwane, Shiga, JP;
Yukiko Iwasaki, Shiga, JP;
Masaki Mizutani, Shiga, JP;
Shunichi Ishihara, Shiga, JP;
Katsumi Nakagawa, Kanagawa, JP;
Hiroshi Sato, Shiga, JP;
Takehito Yoshino, Shiga, JP;
Shoji Nishida, Kanagawa, JP;
Noritaka Ukiyo, Shiga, JP;
Masaaki Iwane, Shiga, JP;
Yukiko Iwasaki, Shiga, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidificationis cut such that a normal line of a principal surfaceof a multicrystalline silicon substrateis substantially perpendicular to a longitudinal direction of crystal grainsof the multicrystalline silicon ingot made by directional solidification