The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2007
Filed:
Dec. 12, 2003
Andreas Wittmann, Kilchberg, CH;
Martin Gotza, Zurich, CH;
Michael Solar, Zurich, CH;
Ernst-eberhard Latta, Adliswil, CH;
Tim Kellner, Zurich, CH;
Martin Krejci, Zurich, CH;
Andreas Wittmann, Kilchberg, CH;
Martin Gotza, Zurich, CH;
Michael Solar, Zurich, CH;
Ernst-Eberhard Latta, Adliswil, CH;
Tim Kellner, Zurich, CH;
Martin Krejci, Zurich, CH;
Bookham Technology plc, Northamptonshire, GB;
Abstract
The present invention concerns an anti-reflection coating for semiconductor lasers, in particular a coating on the laser facet with advantageous properties resulting in improved reliability and reduced probability of specific breakdowns, especially so-called catastrophic optical damages (CODs). It is a quarter-wave coating with a predetermined reflectivity, preferably between 0 and 10% and consists of or comprises SiN:H. It is preferably applied by a Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) process whose process parameters are controlled such that a desired optical thickness and refractive index of the coating are achieved. The PE-CVD process may be controlled to result in an Si/N ratio between about 0.5 and 1.5 and/or to produce a coating of essentially amorphous SiN:H whose density approaches the density of crystalline SiN.