The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2007
Filed:
Aug. 12, 2004
Jun-hee Choi, Suwon-si, KR;
Andrei Zoulkarneev, Suwon-si, KR;
Jun-Hee Choi, Suwon-si, KR;
Andrei Zoulkarneev, Suwon-si, KR;
Samsung SDI Co., Ltd., Suwon-si, KR;
Abstract
Provided is a field emission display (FED) with a carbon nanotube emitter and a method of manufacturing the same. A gate stack that surrounds the CNT emitter has a mask layer that covers an emitter electrode adjacent to the CNT emitter, and a gate insulating film, a gate electrode, a focus gate insulating film (SiO, X<2), and a focus gate electrode formed on the mask layer. The focus gate insulating film has a thickness 2 μm or more, and preferably 3˜15 μm and is preferably made using PECVD. A flow rate of silane and nitric acid for forming the focus gate insulating film and/or the gate insulating film are maintained at 50˜700 sccm and 700˜4,500 sccm, respectively. By doing so and by making the oxide thick, the oxide is less apt to crack and thus less apt to generate a leakage current.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile