The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2007
Filed:
Mar. 08, 2004
Cornelis Reinder Ronda, Aachen, DE;
Stefan Peter Grabowski, Aachen, DE;
Cornelis Reinder Ronda, Aachen, DE;
Stefan Peter Grabowski, Aachen, DE;
NXP B.V., Eindhoven, NL;
Abstract
A semiconductor device, which is arranged in a semiconductor body (), and which comprises at least one source region () and at least one drain region (), each being of the first conductivity type, and at least one body () of the second conductivity type, arranged between source region () and drain region (), and at least one gate electrode () which is isolated with respect to the semiconductor body () via an isolation layer (). Said isolation layer () comprises polarizable particles, which are composed of a nanoparticulate isolating core and a sheath of polarizable anions or polarizable cations. The isolation layer () exhibits a high dielectric constant ε.