The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2007
Filed:
Oct. 28, 2003
Applicants:
Jeffrey P. Gambino, Westford, VT (US);
Jerome B. Lasky, Essex Junction, VT (US);
Jed H. Rankin, South Burlington, VT (US);
Inventors:
Jeffrey P. Gambino, Westford, VT (US);
Jerome B. Lasky, Essex Junction, VT (US);
Jed H. Rankin, South Burlington, VT (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/108 (2006.01); H01L 29/10 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides a process for fabricating a metal oxide semiconductor field effect transistor (MOSFET) having a double-gate and a double-channel wherein the gate region is self-aligned to the channel regions and the source/drain diffusion junctions. The present invention also relates to the FIN MOSFFET structure which is formed using method of the present invention.