The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2007

Filed:

Sep. 08, 2005
Applicants:

Liang-wen Wu, Tao-Yung Hsien, TW;

Ya-ping Tsai, Tao-Yung Hsien, TW;

Fen-ren Chien, Tao-Yung Hsien, TW;

Fu-yu Chang, Tao-Yung Hsien, TW;

Cheng-tsang Yu, Tao-Yung Hsien, TW;

Tzu-chi Wen, Tao-Yung Hsien, TW;

Inventors:

Liang-Wen Wu, Tao-Yung Hsien, TW;

Ya-Ping Tsai, Tao-Yung Hsien, TW;

Fen-Ren Chien, Tao-Yung Hsien, TW;

Fu-Yu Chang, Tao-Yung Hsien, TW;

Cheng-Tsang Yu, Tao-Yung Hsien, TW;

Tzu-Chi Wen, Tao-Yung Hsien, TW;

Assignee:

Formosa Epitaxy Incorporation, Tao-Yung Hsien, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A light emitting diode (LED) structure includes a substrate with a surface and cylindrical photonic crystals, a first type doping semiconductor layer, a first electrode, a light emitting layer, a second type doping semiconductor layer and a second electrode. The first type doping semiconductor layer is formed on the substrate to cover the photonic crystals. The light emitting layer, the second type doping semiconductor layer and the second electrode are sequentially formed on a portion of the first type doping semiconductor layer. The first electrode is formed on the other portion of the first type doping semiconductor layer without being covered by the light emitting layer. Because the substrate with photonic crystals can improve the epitaxial quality of the first type doping semiconductor layer and increase the energy of the light forwardly emitting out of the LED, the light emitting efficiency of the LED is effectively enhanced.


Find Patent Forward Citations

Loading…