The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2007
Filed:
Feb. 10, 2005
Nitride semiconductor light emitting device having electrostatic discharge (esd) protection capacity
Kyu Han Lee, Kyungki-do, KR;
Hyun Kyung Kim, Kyungki-do, KR;
Je Won Kim, Kyungki-do, KR;
Dong Joon Kim, Seoul, KR;
Kyu Han Lee, Kyungki-do, KR;
Hyun Kyung Kim, Kyungki-do, KR;
Je Won Kim, Kyungki-do, KR;
Dong Joon Kim, Seoul, KR;
Samsung Electro-Mechanics Co., Ltd., Kyungki-Do, KR;
Abstract
A nitride semiconductor light emitting device including a light emitting diode and a diode formed on a single substrate, in which the light emitting diode and the diode use a common electrode. According to the present invention, an active layer and a p-type nitride semiconductor layer are each divided into a first region and a second region by an insulative isolation layer, and an ohmic contact layer is formed on the p-type nitride semiconductor layer contained in the first region. A p-type electrode is formed on the ohmic contact layer and is extended to the p-type nitride semiconductor layer contained in the second region. An n-type electrode is formed on the p-type nitride semiconductor layer contained in the second region, passes through the p-type nitride semiconductor layer and the active layer contained in the second region, and is connected to the first n-type nitride semiconductor layer.