The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2007
Filed:
Aug. 12, 2005
Hironobu Sai, Kyoto, JP;
Haruo Tanaka, Shiga, JP;
Hironobu Sai, Kyoto, JP;
Haruo Tanaka, Shiga, JP;
Rohm Co., Ltd., Kyoto-Fu, JP;
Abstract
A semiconductor light-emitting device is made of a group III-nitride compound semiconductor expressed as AlGaInN (where 0≦x≦1, 0≦y≦1, and 0≦x+y≦1). The semiconductor light-emitting device includes: a substrate made of SiC; a semiconductor layer which is placed above the substrate and has a light-emitting region; a multi-layered reflective layer which is placed between the substrate and the semiconductor layer and which reflects light produced in the light-emitting region; and a phase matching layer which is placed between the substrate and the multi-layered reflective layer and which reflects light produced in the light-emitting region and matches a phase of light reflected from a lower boundary surface of the multi-layered reflective layer and a phase of light reflected from a lower boundary surface of the substrate among light produced in the light-emitting region. A thickness of the phase matching layer is set so that a quantity of interfering light produced by the interference of light reflected from the lower boundary surface of the multi-layered reflective layer, light reflected from a lower boundary surface of the phase matching layer, and light reflected from the lower boundary surface of the substrate among light produced in the light-emitting region is locally maximized when the substrate has a predetermined thickness.