The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2007

Filed:

May. 19, 2004
Applicants:

Robert H. Burgener, Ii, Murray, UT (US);

Roger L. Felix, Pleasant Grove, UT (US);

Gary M. Renlund, Salt Lake City, UT (US);

Inventors:

Robert H. Burgener, II, Murray, UT (US);

Roger L. Felix, Pleasant Grove, UT (US);

Gary M. Renlund, Salt Lake City, UT (US);

Assignee:

Other;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B 9/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A zinc oxide crystal growth substrate is disclosed. The zinc oxide crystal growth substrate includes a thin layer of single crystal zinc oxide deposited on an self supporting substrate surface by a chemical deposition process. The chemical deposition process is selected from RF sputtering, CVD (chemical vapor deposition), MOCVD (metal organic chemical vapor deposition), spin coating, electrophoresis, and hydrothermal growth processes. The self supporting substrate may be amorphous, polycrystalline, or crystalline. The thin layer of zinc oxide has a crystal lattice which permits the crystal growth of a crystal compatible with zinc oxide. The compatible crystal has a lattice parameter within about 5% of a corresponding lattice parameter of the zinc oxide.


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