The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2007
Filed:
Oct. 21, 2004
Ki-chul Kim, Gyeonggi-do, KR;
Byou-ree Lim, Gyeonggi-do, KR;
Sang-su Kim, Gyeonggi-do, KR;
Geum-jong Bae, Incheon, KR;
Kwang-wook Koh, Gyeonggi-do, KR;
Ki-Chul Kim, Gyeonggi-do, KR;
Byou-Ree Lim, Gyeonggi-do, KR;
Sang-Su Kim, Gyeonggi-do, KR;
Geum-Jong Bae, Incheon, KR;
Kwang-Wook Koh, Gyeonggi-do, KR;
Samsung Electronis Co., Ltd., Suwon-Si, KR;
Abstract
A programming method of a non-volatile memory device includes a pre-program of the non-volatile memory device, and a main-program of the pre-programmed non-volatile memory device. The non-volatile memory device may include a tunnel dielectric layer, a charge storage layer, a blocking dielectric layer, and a gate electrode, which are sequentially stacked on a semiconductor substrate. The charge storage layer may be an electrically-floated conductive layer, or a dielectric layer having a trap site. By performing a main-program after performing a pre-program, to increase the threshold voltage of the non-volatile memory device, the program current can be effectively reduced.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile