The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2007

Filed:

Aug. 24, 2004
Applicants:

Shang-yi Wu, Jhongli, TW;

Vivien Tsai, Hsinchu, TW;

Ming-hsien Chou, Holmdel, NJ (US);

Inventors:

Shang-Yi Wu, Jhongli, TW;

Vivien Tsai, Hsinchu, TW;

Ming-Hsien Chou, Holmdel, NJ (US);

Assignee:

HC Photonics Corporation, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/365 (2006.01); G02F 1/355 (2006.01); C30B 33/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method is provided for forming a waveguide region within a periodically domain reversed ferroelectric crystal wherein the waveguide region has a refractive index profile that is vertically and horizontally symmetric. The symmetric profile produces effective overlapping between quasi-phasematched waves, a corresponding high rate of energy transfer between the waves and a symmetric cross-section of the radiated wave. The symmetric refractive index profile is produced by a method that combines the use of a diluted proton exchange medium at a high temperature which produces a region of high index relatively deeply beneath the crystal surface, followed by a reversed proton exchange which restores the original crystal index of refraction immediately beneath the crystal surface.


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