Semiconductor photo-detection device and radiation apparatus

Abstract

On the front side of an n-type semiconductor substrate, p-type regionsare two-dimensionally arranged in an array. A high-concentration n-type regionand a p-type regionare disposed between the p-type regionsadjacent each other. The high-concentration n-type regionis formed by diffusing an n-type impurity from the front side of the substrateso as to surround the p-type regionas seen from the front side. The p-type regionis formed by diffusing a p-type impurity from the front side of the substrateso as to surround the p-type regionand high-concentration n-type regionas seen from the front side. Formed on the front side of the n-type semiconductor substrateare an electrodeelectrically connected to the p-type regionand an electrodeelectrically connected to the high-concentration n-type regionand the p-type region. This realizes a semiconductor photodetector and radiation detecting apparatus which can favorably suppress the occurrence of crosstalk, and restrain carriers from flowing into adjacent photodiodes even when a photodiode falls into an electrically floating state because of a breakage of a connecting point due to an initial connection error, a temperature cycle, etc.