The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2007
Filed:
Aug. 20, 2004
Shoichi Yamauchi, Nagoya, JP;
Hitoshi Yamaguchi, Nisshin, JP;
Takashi Suzuki, Nishikamo-gun, JP;
Kyoko Nakashima, Nagoya, JP;
Shoichi Yamauchi, Nagoya, JP;
Hitoshi Yamaguchi, Nisshin, JP;
Takashi Suzuki, Nishikamo-gun, JP;
Kyoko Nakashima, Nagoya, JP;
Denso Corporation, Kariya, JP;
Abstract
In a vertical type MOSFET device having a super junction structure, in which a N conductive type column region and a P conductive type column region are alternately aligned, regarding to a distance between a terminal end of an active region and a terminal end of a column region, the terminal end of the column region is disposed at a position, which is separated from the active region terminal end by a distance obtained by subtracting a half of a width of the N conductive type column region from a distance corresponding to a depth of the column region. Thus, an electric field concentration at a specific portion in a region facing a narrow side of the column structure is prevented so that a breakdown voltage of the vertical type MOSFET is improved.