The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2007
Filed:
Aug. 09, 2004
Kun Sik Pakr, Daejon-Shi, KR;
Seong Wook Yoo, Daejon-Shi, KR;
Jong Moon Park, Daejon-Shi, KR;
Yong Sun Yoon, Daejon-Shi, KR;
Sang Gi Kim, Daejon-Shi, KR;
BO Woo Kim, Daejon-shi, KR;
Yoon Kyu Bae, Daejon-Shi, KR;
Byung Won Lim, Daejon-Shi, KR;
Jin Gun Koo, Daejon-Shi, KR;
Kun Sik Pakr, Daejon-Shi, KR;
Seong Wook Yoo, Daejon-Shi, KR;
Jong Moon Park, Daejon-Shi, KR;
Yong Sun Yoon, Daejon-Shi, KR;
Sang Gi Kim, Daejon-Shi, KR;
Bo Woo Kim, Daejon-shi, KR;
Yoon Kyu Bae, Daejon-Shi, KR;
Byung Won Lim, Daejon-Shi, KR;
Jin Gun Koo, Daejon-Shi, KR;
Electronics and Telecommunications Research Institute, Daejon-shi, KR;
Abstract
Provided is a photodetector in which a transparent nonconductive material having an interface charge and a trapped charge is deposited on a semiconductor surface so as to form a depletion region on the surface of the semiconductor, and the depletion region is employed as an optical detecting region, thereby not only improving detection with respect to light having a wavelength of ultraviolet and blue ranges but also filtering light having a wavelength of visible and infrared ranges, and in which a fabricating process thereof is compatible with a universal silicon CMOS process.