The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2007
Filed:
Dec. 29, 2003
Chih-kuang Wang, Kaohsiung, TW;
Fu-yin Hsu, Taipei, TW;
Shan-chang Chueh, Taipei, TW;
Jiunn-woei Liaw, Taipei, TW;
Chih-Kuang Wang, Kaohsiung, TW;
Fu-Yin Hsu, Taipei, TW;
Shan-Chang Chueh, Taipei, TW;
Jiunn-Woei Liaw, Taipei, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A visible light induced, highly oxidative, and highly reductive photocatalyst. The photocatalyst includes a first semiconductor with a bandgap between valence band and conduction band thereof between 2.0 eV and 3.0 eV, and second semiconductor, combined with the first semiconductor, with a bandgap between valence band and conduction band thereof between 2.0 eV and 3.0 eV. The conduction band of the first semiconductor is negative relative to that of H/HO with a difference of 0.2 eV or greater. The valence band of the second semiconductor is positive relative to that of H/HO with a difference of 2.8 eV or greater.