The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2007
Filed:
Apr. 12, 2004
Chih-feng Huang, Jhubei, TW;
Tuo-hsin Chien, Tucheng, TW;
Chih-Feng Huang, Jhubei, TW;
Tuo-Hsin Chien, Tucheng, TW;
System General Corp., Taipei Hsien, TW;
Abstract
A process of forming a high resistance CMOS resistor with a relatively small die size is provided. According to an aspect of the present invention, the process of fabricating a high resistance resistor is a standard CMOS process that does not require any additional masking. An n-well is firstly formed in a p-type silicon substrate. A nitride film is then deposited and patterned to form a patterned mask layer. The patterned mask layer serves as a mask. A p-field region is formed in the n-well to form a CMOS resistor. The CMOS resistor according to the present invention has a resistance of 10 kΩ–20 kΩ per square.