The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2007
Filed:
Sep. 09, 2003
Johannes Baur, Laaber, DE;
Dominik Eisert, Regensburg, DE;
Michael Fehrer, Bad Abbach, DE;
Berthold Hahn, Hemau, DE;
Volker Härle, Laaber, DE;
Marianne Ortmann, Bernhardswald, DE;
Uwe Strauss, Bad Abbach, DE;
Johannes Völkl, Erlangen, DE;
Ulrich Zehnder, Regensburg, DE;
Johannes Baur, Laaber, DE;
Dominik Eisert, Regensburg, DE;
Michael Fehrer, Bad Abbach, DE;
Berthold Hahn, Hemau, DE;
Volker Härle, Laaber, DE;
Marianne Ortmann, Bernhardswald, DE;
Uwe Strauss, Bad Abbach, DE;
Johannes Völkl, Erlangen, DE;
Ulrich Zehnder, Regensburg, DE;
Osram GmbH, Munich, DE;
Abstract
A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.