The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2007
Filed:
Apr. 11, 2003
Mark Van Schijndel, Eindhoven, NL;
Guofu Zhou, Eindhoven, NL;
Johannes Cornelis Norbertus Rijpers, Eindhoven, NL;
Johannes Henricus Jocephus Roosen, Eindhoven, NL;
Antonius Emilius Theodorus Kuiper, Eindhoven, NL;
Mark Van Schijndel, Eindhoven, NL;
Guofu Zhou, Eindhoven, NL;
Johannes Cornelis Norbertus Rijpers, Eindhoven, NL;
Johannes Henricus Jocephus Roosen, Eindhoven, NL;
Antonius Emilius Theodorus Kuiper, Eindhoven, NL;
Koninklijke Philips Electroinics N.V., Eindhoven, IL;
Abstract
A description is given of a multi-stack optical data storage medium () for rewritable recording using a focused radiation beam () entering through an entrance face () of the medium () during recording. The medium () has a substrate (). Deposited on a side thereof is a first recording stack () with a phase-change type recording layer (). The first recording stack () is present at a position most remote from the entrance face (). At least one further recording stack (), with a phase-change type recording layer () is present closer to the entrance face () than the first recording stack (). A metal reflective layer of Cu, transparent for the radiation beam (), is present in the further recording stack () and has a thickness between 2 and 10 nm. A transparent spacer layer () is present between the recording stacks (). In such a way a metal reflective layer () with a high optical transmission combined with sufficient heat sink action is achieved which furthermore has a low chemical reactivity with adjacent layers.