The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2007
Filed:
Jul. 18, 2002
Toshiyuki Kawakami, Nara, JP;
Yukio Yamasaki, Daito, JP;
Tomoki Ono, Pittsburgh, PA (US);
Shigetoshi Ito, Ikoma, JP;
Susumu Omi, Kitakatsuragi-gun, JP;
Toshiyuki Kawakami, Nara, JP;
Yukio Yamasaki, Daito, JP;
Tomoki Ono, Pittsburgh, PA (US);
Shigetoshi Ito, Ikoma, JP;
Susumu Omi, Kitakatsuragi-gun, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
According to an aspect of the present invention, a nitride semiconductor laser device includes a nitride semiconductor active layer, and a stripe-shaped waveguide for guiding light generated in the active layer. At least one pair of light-absorbing films are provided in at least local regions on the opposite sides of the stripe-shaped waveguide, to reach a distance within 0.3 μm from the waveguide. According to another aspect of the present invention, a gan-based semiconductor laser device includes first conductivity type semiconductor layers, a semiconductor active layer and second conductivity type semiconductor layers stacked sequentially. The laser device further includes a ridge stripe provided to cause a refractive index difference for confinement of light in a lateral direction crossing a longitudinal direction of a cavity, and a current-introducing window portion provided on the ridge stripe. The current-introducing window portion includes a narrow portion that is locally narrowed compared to the width of the ridge stripe.