The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2007
Filed:
Jul. 12, 2002
Takeo Ito, Kumagaya, JP;
Hajime Tanaka, Fujioka, JP;
Tomoko Nakazawa, Maebashi, JP;
Masaaki Inamura, Fukaya, JP;
Taichiro Nakayama, Kyoto, JP;
Takaaki Shinohara, Kyoto, JP;
Yoichiro Nakayama, Kyoto, JP;
Kazuo Sakai, Kawanishi, JP;
Takeo Ito, Kumagaya, JP;
Hajime Tanaka, Fujioka, JP;
Tomoko Nakazawa, Maebashi, JP;
Masaaki Inamura, Fukaya, JP;
Taichiro Nakayama, Kyoto, JP;
Takaaki Shinohara, Kyoto, JP;
Yoichiro Nakayama, Kyoto, JP;
Kazuo Sakai, Kawanishi, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Nikka Techno, Inc., Kyoto, JP;
Fuji Pigment Co., Ltd., Kawanishi, JP;
Abstract
A metal back-attached phosphor screen comprises a metal back layer that has a high-reflectance, high-resistance layer consisting of an In-, Sn- or Bi-oxide layer. The metal back layer of the metal back-attached phosphor screen may have a laminate structure including a high-reflectance layer formed on a phosphor layer side and a high-resistance layer formed on that layer. The high-reflectance layer may be formed of Al, In, Sn or Bi. The high-resistance layer may be formed of an Al-, In-, Sn-, Bi- or Si-oxide or nitride. A high-brightness metal back-attached phosphor screen is provided that prevents the destruction or the deterioration of an electron emission element and a phosphor screen by discharging.