The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2007
Filed:
Mar. 12, 2002
Shunji Nakamura, Kawasaki, JP;
Eiji Yoshida, Kawasaki, JP;
Shunji Nakamura, Kawasaki, JP;
Eiji Yoshida, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
The semiconductor device comprises: an insulation filmformed over a silicon substrate, an insulation filmformed on the insulation filmand having opening, and conductorformed at least in the opening. Cavityhaving the peripheral edges conformed to a configuration of the openingis formed in the insulation film. The cavityis formed in the region between the electrodes or the regions between the interconnection layers so as to decrease the dielectric constant between the electrodes or between the interconnection layers, whereby the parasitic capacitances of the region between the electrodes or the region between the interconnection layers can be drastically decreased, and consequently the semiconductor device can have higher speed.