The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2007
Filed:
Jun. 09, 2005
Min-woo Song, Seongnam-si, KR;
Seok-jun Won, Seoul, KR;
Yong-kuk Jeong, Seoul, KR;
Dae-jin Kwon, Seoul, KR;
Weon-hong Kim, Suwon-si, KR;
Min-Woo Song, Seongnam-si, KR;
Seok-Jun Won, Seoul, KR;
Yong-Kuk Jeong, Seoul, KR;
Dae-Jin Kwon, Seoul, KR;
Weon-Hong Kim, Suwon-si, KR;
Abstract
A method of forming a dielectric layer using a plasma enhanced atomic layer deposition technique includes: loading a semiconductor substrate having a three-dimensional structure into a reaction chamber; and repeatedly performing the following steps until a dielectric layer with a desired thickness is formed: supplying a source gas into the reaction chamber; stopping the supply of the source gas and purging the source gas remaining inside the reaction chamber; and supplying oxygen gas into the reaction chamber after purging the source gas, and applying RF power for oxygen plasma treatment, a level of the applied RF power and a partial pressure of the oxygen gas being increased concurrently with an increased aspect ratio of the three-dimensional structure.