The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2007
Filed:
Jun. 20, 2003
Hideki Doshita, Kyoto, JP;
Hideki Doshita, Kyoto, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
After forming a gate insulating film on a semiconductor substrate, a silicon film is deposited on the gate insulating film, and a high-melting point metal film is deposited on the silicon film. After forming a hard mask made of a silicon oxide film or a silicon nitride film on the high-melting point metal film, the high-melting point metal film is dry etched by using the hard mask as a mask. After removing a residue or a natural oxide film present on the silicon film through dry etching, the silicon film is dry etched by using the hard mask as a mask. The residue or the natural oxide film is removed while suppressing excessive etching of the silicon film.