The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2007

Filed:

Mar. 11, 2004
Applicants:

Akihiko Itami, Hachioji, JP;

Tomoo Sakimura, Hachioji, JP;

Kazuhisa Shida, Hachioji, JP;

Masao Asano, Hachioji, JP;

Hiroshi Yamazaki, Hachioji, JP;

Inventors:

Akihiko Itami, Hachioji, JP;

Tomoo Sakimura, Hachioji, JP;

Kazuhisa Shida, Hachioji, JP;

Masao Asano, Hachioji, JP;

Hiroshi Yamazaki, Hachioji, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03G 5/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

An electrophotographic photoreceptor having an interlayer and a photosensitive layer on an electroconductive substrate, wherein the interlayer comprises any one of 1) an N-type semiconductive particle containing at least one of transition metals having an atomic number of 21 to 30, 39, 41 to 48 and 57 to 80, the total amount of the transition metals having an atomic number of 21 to 30, 39, 41 to 48 and 57 to 80 being from 100 ppm to 2.0% by mass, or 2) a metal oxide particle containing a silicon atom in a bond energy spectrum by the X-ray photoelectron spectroscopy at a ratio represented by the following Formula (1): Formula (1) 0.02≦Si/M≦0.55 Si: a peak intensity of a silicon atom among the bond energy spectrum, and M: a peak intensity of a metal atom among the bond energy spectrum.


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