The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2007
Filed:
May. 07, 2001
Hiroshi Morisaki, Saitama, JP;
Yasuo Imamura, Fukuoka, JP;
Hiroshi Morisaki, Saitama, JP;
Yasuo Imamura, Fukuoka, JP;
Denki Kagaku Kogyo Kabushiki Kaisha, Tokyo, JP;
Abstract
A low relative permittivity SiOfilm excellent in heat resistance without using an alkali metal, fluorine, etc., a method for modifying an SiOfilm to accomplish a further reduction of the relative permittivity of the low relative permittivity SiOfilm and further to increase the insulating property, a highly reliable semiconductor device free from crack or peeling of the film by employing the low relative permittivity SiOfilm as an interlayer insulating film for metal wirings, are provided. The low relative permittivity film is characterized in that it is made of a porous material, the major constituent of which is SiO(where 1.8≧X≧1.0), and the relative permittivity at 1 MHz is at most 2.3.