The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2007
Filed:
Jan. 31, 2005
Applicants:
Masahiro Kobashi, Kanagawa, JP;
Keishin Handa, Mie, JP;
Shinji Aramaki, Kanagawa, JP;
Yoshimasa Sakai, Kanagawa, JP;
Inventors:
Masahiro Kobashi, Kanagawa, JP;
Keishin Handa, Mie, JP;
Shinji Aramaki, Kanagawa, JP;
Yoshimasa Sakai, Kanagawa, JP;
Assignee:
Mitsubishi Chemical Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
Abstract
A field effect transistor comprising, as provided on a support substrate, an insulation layer, a gate electrode and an organic semiconductor layer separated by the insulation layer, a source electrode and a drain electrode provided so as to contact the organic semiconductor layer, wherein elongation ε(%) at the yield point of the insulation layer is larger than elongation ε(%) at the yield point of the support substrate.