The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2007
Filed:
Apr. 28, 2004
Applicants:
Hirohisa Kawasaki, Yokohama, JP;
Kazunari Ishimaru, Yokohama, JP;
Inventors:
Hirohisa Kawasaki, Yokohama, JP;
Kazunari Ishimaru, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a semiconductor substrate, an insulating film projected on a surface of the semiconductor substrate, a semiconductor film provided on a side surface of the insulating film, and MIS transistor formed in the semiconductor film, the MIS transistor having source, gate and drain region. The semiconductor device further includes a gate electrode provided on the gate region of the MIS transistor, the length of the gate electrode being larger than the thickness of the semiconductor film.