The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2007
Filed:
Mar. 05, 2003
Akira Terakawa, Nara, JP;
Toshio Asaumi, Kobe, JP;
Akira Terakawa, Nara, JP;
Toshio Asaumi, Kobe, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
In a photovoltaic device of the present invention, junction characteristics are improved by enhancing interface characteristics between a crystalline silicon semiconductor and an amorphous silicon semiconductor. In the photovoltaic device, an n-type crystalline substrate () and a p-type amorphous silicon thin film () are laminated with an i-type amorphous silicon thin film () interposed as well as an n-type amorphous silicon thin film () is provided on a rear surface of the crystalline silicon substrate () by interposing an i-type amorphous silicon thin film () between them. Oxygen atoms exist at interfaces between the crystalline silicon substrate () and the i-type amorphous silicon thin films (), () in a higher concentration than that in the i-type amorphous silicon thin films (), ().