Semiconductor devices, methods of manufacturing semiconductor devices, circuit substrates and electronic devices

Abstract

Certain embodiments include a semiconductor device capable of preventing a retardation of signal transmission between the smallest units, a method for the manufacture thereof, a circuit substrate and an electronic device. Embodiments also include a manufacturing method comprising a laminating step of forming tunnel insulating filmsandfloating gatesanddielectric filmsandcontrol gatesandon first and second memory cell areasandformed mutually adjacent to each other on a semiconductor substratea plurality of impurity area formation steps of forming sources and drainsandon the first and second memory cell areasandand forming a connecting areacapable of forming an electric connection between oneof the source and drain of the first memory cell areaand oneof the source and drain of the second memory cell areaThe connecting areais formed to have a lower electric resistance than impurity areasandformed in one of the of impurity area formation steps.