The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2007
Filed:
Nov. 12, 2003
Young Hoon Park, Pyungtaek, KR;
Cheol Hyun Ahn, Pyungtaek, KR;
Sang Jin Lee, Pyungtaek, KR;
Byoung Cheol Cho, Pyungtaek, KR;
Sang Kwon Park, Pyungtaek, KR;
Hong Joo Lim, Pyungtaek, KR;
Sang Kyu Lee, Pyungtaek, KR;
Jang Ho Bae, Pyungtaek, KR;
Young Hoon Park, Pyungtaek, KR;
Cheol Hyun Ahn, Pyungtaek, KR;
Sang Jin Lee, Pyungtaek, KR;
Byoung Cheol Cho, Pyungtaek, KR;
Sang Kwon Park, Pyungtaek, KR;
Hong Joo Lim, Pyungtaek, KR;
Sang Kyu Lee, Pyungtaek, KR;
Jang Ho Bae, Pyungtaek, KR;
IPS, Ltd., , KR;
Abstract
A method of depositing a thin film using a hafnium compound includes depositing a primary thin film and depositing a secondary thin film. The depositing of the primary thin film and the depositing of the secondary thin film are repeated once or more. The depositing of the primary thin film includes feeding a first reactive gas, purging the first reactive gas, feeding a third reactive gas, and purging the third reactive gas, and repeating the aforementioned steps a first plurality of (N) times. The feeding of the first reactive gas includes feeding a second reactive gas, purging the second reactive gas, feeding the third reactive gas, and purging the third reactive gas, and repeating the aforementioned steps a second plurality of (M) times.