The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2007
Filed:
Jan. 12, 2005
Ravindraraj Ramaraju, Round Rock, TX (US);
Prashant U. Kenkare, Austin, TX (US);
Jogendra C. Sarker, Austin, TX (US);
Ravindraraj Ramaraju, Round Rock, TX (US);
Prashant U. Kenkare, Austin, TX (US);
Jogendra C. Sarker, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A SRAM () includes a SRAM cell (), the cell () includes a first storage node (N), a second storage node (N), and a cross coupled latch () including a first primary source current path to the first storage node, a first primary sink current path to the first storage node, a second primary source current path to the second storage node, a second primary sink current path to the second storage node, a fifth primary current path to the first storage node, and a sixth primary current path to the second storage node. During standby and/or a read operation of the SRAM cell (), one of the fifth primary current path and the sixth primary current path is conductive. During a write operation, the fifth primary current path and the sixth primary current path are non-conductive.