The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2007
Filed:
Nov. 19, 2004
Applicants:
Katsuyuki Torii, Saitama, JP;
Ryoji Takahashi, Saitama, JP;
Inventors:
Katsuyuki Torii, Saitama, JP;
Ryoji Takahashi, Saitama, JP;
Assignee:
Sanken Electric Co., Ltd., Saitama, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/082 (2006.01);
U.S. Cl.
CPC ...
Abstract
An insulated gate bipolar transistor has a P-type collector region containing a P-type impurity such as boron. A relatively thin N-type buffer region containing arsenic in a relatively high concentration is formed on the collector region via an anti-diffusion region. The anti-diffusion region is provided in such a way that its thickness is the same as or slightly smaller than the distance over which the P-type impurity is diffused from the collector region toward the buffer region in a device fabrication process.