The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2007
Filed:
Aug. 05, 2004
Applicants:
Akira Ito, Irvine, CA (US);
Henry K. Chen, Irvine, CA (US);
Inventors:
Akira Ito, Irvine, CA (US);
Henry K. Chen, Irvine, CA (US);
Assignee:
Broadcom Corporation, Irvine, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/01 (2006.01); H01L 21/338 (2006.01);
U.S. Cl.
CPC ...
Abstract
A P-type metal oxide semiconductor (PMOS) device can include an N-well that does not extend completely throughout the active region of the PMOS device. For example, the PMOS device can be fabricated using a masking step to provide an N-well having an inner perimeter and an outer perimeter. The inner perimeter of the N-well surrounds at least a portion of the active region of the PMOS device. According to an embodiment, the inner perimeter of the N-well surrounds the entire active region. The PMOS device can include a deep N-well in contact with the N-well.