The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7160819 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 09, 2007

Filed:

Apr. 25, 2005
Applicants:

John F. Conley, Jr., Camas, WA (US);

Yoshi Ono, Camas, WA (US);

David R. Evans, Beaverton, OR (US);

Inventors:

John F. Conley, Jr., Camas, WA (US);

Yoshi Ono, Camas, WA (US);

David R. Evans, Beaverton, OR (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for selective ALD of ZnO on a wafer preparing a silicon wafer; patterning the silicon wafer with a blocking agent in selected regions where deposition of ZnO is to be inhibited, wherein the blocking agent is taken from a group of blocking agents includes isopropyl alcohol, acetone and deionized water; depositing a layer of ZnO on the wafer by ALD using diethyl zinc and HO at a temperature of between about 140° C. to 170° C.; and removing the blocking agent from the wafer.


Find Patent Forward Citations

Conley, Jr., John. (2007). Method to perform selective atomic layer deposition of zinc oxide (U.S. Patent No. 7160819). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7160819

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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