The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2007
Filed:
Jun. 29, 2004
Applicants:
Kang Sup Shin, Cheongju-Shi, KR;
Sang Wook Ryu, Cheongju-Shi, KR;
Inventors:
Kang Sup Shin, Cheongju-Shi, KR;
Sang Wook Ryu, Cheongju-Shi, KR;
Assignee:
Hynix Semiconductor Inc., Kyungki-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention discloses a method for forming an interlayer insulation film in a semiconductor device, comprising the steps of: sequentially forming a porous low dielectric insulation film and a capping layer on the semiconductor substrate on which a few elements of the semiconductor device have been formed; and forming damascene patterns in the porous low dielectric insulation film by an etching process, and forming a protection film for closing pores exposed during the etching process at the same time.