The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2007
Filed:
Jun. 06, 2005
Huong T. Nguyen, San Ramon, CA (US);
Dennis Hausmann, Los Gatos, CA (US);
Huong T. Nguyen, San Ramon, CA (US);
Dennis Hausmann, Los Gatos, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
A process is described that forms a low resistivity connection between a tungsten layer and a silicon surface with high adherence of the tungsten to the silicon. The silicon surface is plasma-cleaned to remove native oxide. A very thin layer (one or more monolayers) of Si—NHis formed on the silicon surface, serving as an adhesion layer. A WNlayer is formed over the Si—NHlayer, using an atomic layer deposition (ALD) process, to serve as a barrier layer. A thick tungsten layer is formed over the WNlayer by CVD. An additional metal layer (e.g., aluminum) may be formed over the tungsten layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile