The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2007
Filed:
Jun. 03, 2005
Young-sub You, Gyeonggi-do, KR;
Ki-su NA, Gyeonggi-do, KR;
Hun-hyeoung Leam, Gyeonggi-do, KR;
Woong Lee, Seoul, KR;
Young-Sub You, Gyeonggi-do, KR;
Ki-Su Na, Gyeonggi-do, KR;
Hun-Hyeoung Leam, Gyeonggi-do, KR;
Woong Lee, Seoul, KR;
Samsung Electronics Co. Ltd., , KR;
Abstract
Methods of forming a gate structure of a non-volatile memory device include forming a gate pattern having a control gate on a semiconductor substrate. An oxidation-preventing layer is formed on the control gate in a process chamber while maintaining a substantially oxygen free atmosphere in the process chamber. An oxide spacer is formed on a sidewall of the gate pattern with the oxidation-preventing layer thereon in the process chamber. Forming an oxidation-preventing layer may include exposing the gate pattern to a first gas in the process chamber and forming an oxide spacer may include exposing the gate pattern to a second gas including oxygen in the process chamber.