The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2007
Filed:
Jun. 16, 2004
Applicants:
Peter Rabkin, Cupertino, CA (US);
Hsingya Arthur Wang, San Jose, CA (US);
Kai-cheng Chou, San Jose, CA (US);
Inventors:
Peter Rabkin, Cupertino, CA (US);
Hsingya Arthur Wang, San Jose, CA (US);
Kai-Cheng Chou, San Jose, CA (US);
Assignee:
Hynix Semiconductor, Inc., Kyoungki-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
In accordance with an embodiment of the present invention, a semiconductor structure includes an undoped polysilicon layer, a doped polysilicon layer in contact with the undoped polysilicon layer, and an insulating layer in contact with the undoped polysilicon layer. The undoped polysilicon layer is sandwiched between the doped polysilicon layer and the insulating layer.