The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2007
Filed:
Dec. 19, 2003
Kevin Ward Haberern, Cary, NC (US);
Raymond Rosado, Apex, NC (US);
Michael John Bergman, Chapel Hill, NC (US);
David Todd Emerson, Chapel Hill, NC (US);
Kevin Ward Haberern, Cary, NC (US);
Raymond Rosado, Apex, NC (US);
Michael John Bergman, Chapel Hill, NC (US);
David Todd Emerson, Chapel Hill, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
Methods of forming a semiconductor device can include forming a semiconductor structure on a substrate, the semiconductor structure having mesa sidewalls and a mesa surface opposite the substrate. A contact layer can be formed on the mesa surface wherein the contact layer has sidewalls and a contact surface opposite the mesa surface and wherein the contact layer extends across substantially an entirety of the mesa surface. A passivation layer can be formed on the mesa sidewalls and on portions of the contact layer sidewalls adjacent the mesa surface, and the passivation layer can expose substantially an entirety of the contact surface of the contact layer.