The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2007
Filed:
Nov. 03, 2004
Applicant:
Shang-hyeun Park, Boryeong-si, KR;
Inventor:
Shang-Hyeun Park, Boryeong-si, KR;
Assignee:
Samsung SDI Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 9/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming carbon nanotube emitters and a method of manufacturing an FED using such carbon nanotube emitters includes: forming a carbon nanotube layer on a substrate on which a plurality of electrodes are formed, coating a photoresist on the carbon nanotube layer, patterning the photoresist such that the photoresist only remains above the electrodes, removing an exposed portion of the carbon nanotube layer by etching using the patterned photoresist as a etch mask, and removing the photoresist pattern and forming the carbon nanotube emitters on the electrodes.