The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2007
Filed:
Aug. 23, 2005
Robert L. Thornton, Los Altos, CA (US);
Douglas G. Stinson, Fremont, CA (US);
Roger K. Malmhall, Mountain View, CA (US);
Mathew C. Bashaw, Palo Alto, CA (US);
Robert L. Thornton, Los Altos, CA (US);
Douglas G. Stinson, Fremont, CA (US);
Roger K. Malmhall, Mountain View, CA (US);
Mathew C. Bashaw, Palo Alto, CA (US);
Research Investment Network, Inc., Long Beach, CA (US);
Abstract
A near-field optical apparatus having one or more solid state lasers and an aerodynamically shaped slider which comprise a single integrated, monolithic device fabricated from the same base semiconductor material. The monolithic optical head can be quickly and easily attached to the read arm of an optical read/write device without requiring attachment of separate laser elements, and without micropositioning or use of optical microscopy for positioning the lasers. The optical head comprising a single semiconductor substrate including a first region which defines a slider having an air bearing surface, and at least one second, laser region which defines a diode laser, with the diode laser having an emission face which is substantially co-planar with the air bearing surface. The semiconductor substrate preferably includes an active layer, a p-clad layer or reflective layer adjacent a first side of the active region, an n-clad layer or reflective layer adjacent a second side of the active layer, and an n-semiconductor layer adjacent the n-clad layer. A slider region of the semiconductor substrate includes an air bearing surface, adjacent the p-clad layer, which is aerodynamically structured and configured to define a slider. The integral lasers include a p-electrical contact adjacent to the p-clad layer and proximate to the laser emission face, and an n-electrical contact adjacent to the n-clad layer or an n-semiconductor layer. The laser mode is defined by oxidized or ion-diffusion regions associated with the p-clad layer or n-clad layer of the laser. A conductive via through the substrate allows electrical connection with the p-side contact to be achieved from the n-side of the substrate. The optical head is used in a near-field optical system with an optical medium having a phase change layer.