The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2007
Filed:
Jul. 15, 2003
Applicants:
Norihiko Ui, Yamanashi, JP;
Kazutaka Inoue, Yamanashi, JP;
Kazuo Nambu, Yamanashi, JP;
Inventors:
Assignee:
Fujitsu Quantum Devices Limited, Yamanashi, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/80 (2006.01);
U.S. Cl.
CPC ...
Abstract
A field-effect transistor includes a channel layer that is formed on a predetermined semiconductor layer and has an impurity concentration varying from a low value to a high value, and a source region and a drain region each having a bottom face above the predetermined semiconductor layer.