The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2007
Filed:
Jan. 31, 2005
Hiroshi Kitaguchi, Naka, JP;
Kensuke Amemiya, Hitachinaka, JP;
Kazuma Yokoi, Hitachi, JP;
Yuuichirou Ueno, Hitachi, JP;
Katsutoshi Tsuchiya, Hitachi, JP;
Norihito Yanagita, Hitachi, JP;
Shinichi Kojima, Hitachi, JP;
Keitaro Hitomi, Sendai, JP;
Tadayoshi Shoji, Sendai, JP;
Hiroshi Kitaguchi, Naka, JP;
Kensuke Amemiya, Hitachinaka, JP;
Kazuma Yokoi, Hitachi, JP;
Yuuichirou Ueno, Hitachi, JP;
Katsutoshi Tsuchiya, Hitachi, JP;
Norihito Yanagita, Hitachi, JP;
Shinichi Kojima, Hitachi, JP;
Keitaro Hitomi, Sendai, JP;
Tadayoshi Shoji, Sendai, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
The present invention provides a semiconductor radiation detector and radiation detection apparatus capable of improving energy resolution and the semiconductor radiation detection apparatus includes a semiconductor radiation detector and a signal processing circuit which processes a radiation detection signal output from the semiconductor radiation detector. The semiconductor radiation detector is provided with anode electrodes A and cathode electrodes C disposed so as to face each other with semiconductor radiation detection elements placed in-between. The semiconductor radiation detection element is made up of a single crystal of thallous bromide containing trivalent thallium (e.g., tribromobis thallium). The semiconductor radiation detector containing such a semiconductor radiation detection element reduces lattice defects in the single crystal and thereby increases charge collection efficiency.