The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7157641 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 02, 2007

Filed:

Sep. 16, 2004
Applicant:

Brian a Gregg, Golden, CO (US);

Inventor:

Brian A Gregg, Golden, CO (US);

Assignee:

Midwest Research Institute, Kansas City, MO (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A bi-layer photovoltaic cell, and method () of making same, with an electric field applied at the p-n heterojunction interface. The cell includes a first semiconductor layer including a binder, nanocrystals of an n-type semiconductor, and spatially bound cations and a second semiconductor layer contacting the first semiconductor layer that includes a binder, nanocrystals of a p-type semiconductor, and spatially bound anions. The cell further includes a p-n heterojunction at the contacting interface between the first and second semiconductor layers. An electric field is created by the spatially bound cations and anions that are located in the layers proximal to the p-n heterojunction. The nanocrystals are single crystals of organic semiconductors that are less than 50 nanometers in size and that comprise a majority of the volume of their respective layers. The binder is a polymer matrix, such as an epoxy. The cell includes electrical contacts abutting the semiconductor layers.


Find Patent Forward Citations

Gregg, Brian. (2007). Organic photovoltaic cells with an electric field integrally-formed at the heterojunction interface (U.S. Patent No. 7157641). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7157641

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