The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2007
Filed:
Jun. 30, 2003
John Biteau, Saint-Maur-des-Fossés, FR;
Jean-pierre Boilot, Meudon la Fôret, FR;
Frédéric Chaput, Massy, FR;
John Biteau, Saint-Maur-des-Fossés, FR;
Jean-Pierre Boilot, Meudon la Fôret, FR;
Frédéric Chaput, Massy, FR;
Essilor International Compagnie Generale d'Optique, Charenton Cedex, FR;
Abstract
The method consists in hydrolysing an initial volume Vse of a precursor material comprising at least one polyalkoxysilane with a quantity of water such that where x H0 and x Si represent the number of moles of H0 and Si present, respectively, the concentration of the hydrolysate up to a volume substantially equal to the initial volume Vsi, leaving the concentrated hydrolysate until segregation into an aqueous phase and an organo-silicon phase, and recovery of the organo-silicon phase. A product can be obtained which comprises an organo-silicon sol comprising silicon species T, T, and T, wherein the molar fraction of species Tis equal or greater than 50%, comprising a condensation rate equal to or greater than 0.65, and further defined as lacking water, as determined by analyzing a sample of said organo-silicon sol byH NMR and observing the absence of peak corresponding to water.