The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2007
Filed:
Feb. 09, 2005
Stephan Kudelka, Ottendorf-Okrilla, DE;
Stephan Kudelka, Ottendorf-Okrilla, DE;
Infineon Technologies AG, Munich, DE;
Abstract
The present invention provides a method for expanding a trench in a semiconductor structure. A trench is provided in a semiconductor substrate, hydrogen-terminated silicon surfaces are provided in the trench, anisotropic wet etching of the silicon surfaces in the trench with an alkaline etchant occur, and the trench is rinsed with a proton-containing neutralizing agent for the removal of the alkaline etchant. Between the wet etching step and the rinsing step, an anodic passivation of the etched silicon surfaces in the trench is carried out, in the course of which an etching stop layer is formed on the etched silicon surfaces in the trench.