The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2007
Filed:
Jan. 16, 2004
Robert James Pascoe Lander, Leuven, BE;
Dirk Maarten Knotter, Nijmegen, NL;
Robert James Pascoe Lander, Leuven, BE;
Dirk Maarten Knotter, Nijmegen, NL;
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
Consistent with an example embodiment according to the invention, a material for the intermediate layer is chosen which can be selectively etched with respect to the dielectric layer. Before the deposition of the first conductor layer, the intermediate layer is removed at the location of the first channel region, and after the deposition of the first conductor layer and the removal thereof outside the first channel region and before the deposition of the second conductor layer, the intermediate layer is removed at the location of the second channel region. Thus, field effect transistors (FETs) are obtained in a simple manner and without damage to their gate dielectric. Preferably, a further intermediate layer is deposited on the intermediate layer which can be selectively etched with respect thereto.