The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2007
Filed:
Mar. 13, 2002
Applicants:
Junji Yamada, Gunma, JP;
Yutaka Yamada, Gunma, JP;
Junichi Ariyoshi, Mie, JP;
Inventors:
Assignee:
Sanyo Electric Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract
The method of manufacturing a semiconductor device comprises the steps of: forming a gate electrode on a semiconductor substrate through a gate insulated film; forming source/drain regions to be adjacent to the gate electrode forming an Al wiring through an interlayer insulating film covering the gate electrode; and implanting impurity ions into a surface of the semiconductor substrate using as a mask the Al wiring and a photoresist formed thereon, thereby writing information into each of elements constituting a mask ROM and changing an outputting manner at an output port.